Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

@article{Chen2015CompactMO,
  title={Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design},
  author={Pai-Yu Chen and Shimeng Yu},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={4022-4028}
}
In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based… CONTINUE READING
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