Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

  title={Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design},
  author={Pai-Yu Chen and Shimeng Yu},
  journal={IEEE Transactions on Electron Devices},
In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based… CONTINUE READING
Highly Cited
This paper has 51 citations. REVIEW CITATIONS
34 Extracted Citations
31 Extracted References
Similar Papers

Citing Papers

Publications influenced by this paper.
Showing 1-10 of 34 extracted citations

51 Citations

Citations per Year
Semantic Scholar estimates that this publication has 51 citations based on the available data.

See our FAQ for additional information.

Referenced Papers

Publications referenced by this paper.
Showing 1-10 of 31 references

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

  • S. Yu, Y. Y. Chen, X. Guan, H.-S.P. Wong, J. A. Kittl
  • Appl. Phys. Lett., vol. 100, no. 4, p. 043507…
  • 2012
Highly Influential
4 Excerpts

Balancing SET/RESET pulse for > 1010 endurance in HfO2/Hf 1T1R bipolar RRAM

  • Y. Y. Chen
  • IEEE Trans. Electron Devices, vol. 59, no. 12, pp…
  • 2012
Highly Influential
4 Excerpts

A 130.7-mm2 2-layer 32-Gb ReRAM memory device in 24-nm technology

  • T.-Y. Liu
  • IEEE J. Solid-State Circuits, vol. 49, no. 1, pp…
  • 2014
1 Excerpt

Similar Papers

Loading similar papers…