Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

@article{Chauhan2007CompactMO,
  title={Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs},
  author={Y. Chauhan and François Krummenacher and Renaud Gillon and Benoit Bakeroot and M. J. Declercq and A. M. Ionescu},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={1527-1539}
}
This paper reports on the detailed analysis and modeling of lateral nonuniform doping present in intrinsic MOS channel of high-voltage (HV) MOSFETs, e.g., vertical (VDMOS) and lateral diffused MOS (LDMOS). It is shown that conventional long-channel MOSFET models using uniform lateral doping can never correctly model the capacitance behavior of these devices. A new analytical compact model for lateral nonuniformly doped MOSFET is reported. The intrinsic nonuniformly doped MOS model is first… CONTINUE READING
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