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# Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs

@article{Holtij2014CompactMF, title={Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs}, author={Thomas Holtij and Michael Graef and Franziska Hain and Alexander Kloes and Benjamn Iniguez}, journal={IEEE Transactions on Electron Devices}, year={2014}, volume={61}, pages={288-299} }

- Published 2014 in IEEE Transactions on Electron Devices

A 2-D closed form, analytical compact model for long- and short-channel junctionless accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for the potential is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. From this closed-form solution, we derive simple equations for the calculation of the threshold voltage VT and subthreshold slope S. Using Lambert's W-function and a smoothing function for the transition… CONTINUE READING

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