Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs

@article{Holtij2014CompactMF,
  title={Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs},
  author={Thomas Holtij and Michael Graef and Franziska Hain and Alexander Kloes and Benjamn Iniguez},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={288-299}
}
A 2-D closed form, analytical compact model for long- and short-channel junctionless accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for the potential is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. From this closed-form solution, we derive simple equations for the calculation of the threshold voltage VT and subthreshold slope S. Using Lambert's W-function and a smoothing function for the transition… CONTINUE READING
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