Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure

@article{Pahwa2017CompactMF,
  title={Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure},
  author={Girish Pahwa and Tapas Dutta and Amit Agarwal and Yogesh Singh Chauhan},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={1366-1374}
}
We present a physics-based compact model for a ferroelectric negative capacitance FET (NCFET) with a metal–ferroelectric–insulator–semiconductor (MFIS) structure. The model is computationally efficient, and it accurately calculates the gate charge density as a function of the applied voltages. For the first time, an explicit expression for the channel current in bulk NCFET is also deduced taking into account the spatial variation of ferroelectric polarization in the longitudinal direction… CONTINUE READING

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