Compact 6T SRAM cell with robust read/write stabilizing design in 45nm Monolithic 3D IC technology

@article{Thomas2009Compact6S,
  title={Compact 6T SRAM cell with robust read/write stabilizing design in 45nm Monolithic 3D IC technology},
  author={Olivier Thomas and Mathilde Vinet and Olivier Rozeau and Perrine Batude and Alexandre Valentian},
  journal={2009 IEEE International Conference on IC Design and Technology},
  year={2009},
  pages={195-198}
}
This paper presents an innovative 6T SRAM cell designed in Monolithic 3D IC technology. A specific compact model in 45nm has been developed haled on silicon measurements and TCAD extractions. The simulation results exhibit a strong improvement of the cell electrical characteristics thanks to the ability to modulate the threshold voltage of the devices (static noise margin +10%, number of bit per line +12%, static power consumption −12%), when compared with a standard 6T cell designed in 2D. The… CONTINUE READING
Highly Cited
This paper has 21 citations. REVIEW CITATIONS