Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519

@article{Meuffels2011CommentO,
  title={Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519},
  author={P. M. Meuffels and Herbert P. Schroeder},
  journal={Applied Physics A},
  year={2011},
  volume={105},
  pages={65-67}
}
In a recent publication (see title), it was proposed that—instead of the average macroscopic electric field—one should use the local or LORENTZ field inside dielectrics to calculate high-field ionic drift mobilities. This incorrect proposition seems now to start circulating even though it has been clearly shown in the past that the standard equations for ionic conduction in solids are by no way subject to any corrections for local or LORENTZ field effects. It is thus worth to recall some basic… 
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We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation
Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switching
Hopping conduction at high electric fields in transition metal ion glasses
The high-field electrical properties of several groups of transition-metal phosphate glasses have been examined, especially those based on V, Fe, Cu and Mo ions, and pure and doped tungstates.
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The question of local field corrections to the hopping conductivity of small polarons in a polarizable dielectric is investigated. It is shown that the Lorentz contribution to the dipolar potentials
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