Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519

@article{Meuffels2011CommentO,
  title={Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519},
  author={P. M. Meuffels and Herbert P. Schroeder},
  journal={Applied Physics A},
  year={2011},
  volume={105},
  pages={65-67}
}
In a recent publication (see title), it was proposed that—instead of the average macroscopic electric field—one should use the local or LORENTZ field inside dielectrics to calculate high-field ionic drift mobilities. This incorrect proposition seems now to start circulating even though it has been clearly shown in the past that the standard equations for ionic conduction in solids are by no way subject to any corrections for local or LORENTZ field effects. It is thus worth to recall some basic… 
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43 Citations

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switching…
The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors
  • Y. Oh, H. Noh, K. Chang
  • Physics, Materials Science
    Science and technology of advanced materials
  • 2015
TLDR
First-principles molecular dynamics simulations for the drift motion of oxygen vacancies show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field, supporting the oxygen vacancy model.
Flexible Monte-Carlo approach to simulate electroforming and resistive switching in filamentary metal-oxide memristive devices
An original approach has been presented to model the regularities and parameters of resistive switching based on the kinetic Monte Carlo (kMС) 3D simulation of stochastic migration of oxygen…
Physics of the Switching Kinetics in Resistive Memories
Memristive cells based on different physical effects, that is, phase change, valence change, and electrochemical processes, are discussed with respect to their potential to overcome the voltage–time…
The ultimate switching speed limit of redox-based resistive switching devices.
TLDR
In this work, the ultimate switching speed limit of redox-based resistive switching devices is discussed and it is derived that the switching speed is limited by the phonon frequency.
Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)
Ion transport in the solid state has been regarded as imperative with regards to high energy density electrochemical storage devices (for instance, batteries) for efficient electric mobility. Of…
Memristor Materials: Working Conditions And Properties
Material independent memory effect is all prevalent in the nature because of the dynamical properties of electrons and ions. These perturbations are responsible for generating and evolving to new…
SiO2 based conductive bridging random access memory
TLDR
A review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper- or silver-doped silicon dioxide as the ion conducting layer which greatly lower the barrier for widespread usage and permit integration of memory with silicon-based devices.
The Memristor and the Scientific Method
In 1971 a “missing memristor” was proposed by a circuit theorist named Leon Chua as a 4 fundamental passive circuit element defined by a non-linear relationship between electric charge and magnetic…
Collective dipole effects in ionic transport under electric fields
TLDR
It is shown that a classical picture of ionic transport in solids does not hold in general as collective dipole effects may be critical, and polarization work contributions from the migrating ion and its environment are introduced.
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References

SHOWING 1-10 OF 13 REFERENCES
Exponential ionic drift: fast switching and low volatility of thin-film memristors
We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation…
Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switching…
Hopping conduction at high electric fields in transition metal ion glasses
The high-field electrical properties of several groups of transition-metal phosphate glasses have been examined, especially those based on V, Fe, Cu and Mo ions, and pure and doped tungstates.…
The effect of local-field correction on the transport properties of crystals
The question of local-field correction to the electrical transport is studied in more detail; namely, for the hopping limit and the band limit. In the hopping limit, if the hopping takes place…
Ion transport in solids under conditions which include large electric fields
Local-field effects on carrier hopping mobilities
The work required to move a charge between different sites in a lattice subject to an electric field is treated in detail. It includes a local-field contribution when the sites are inequivalent and…
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical…
Dielectric Constant with Local Field Effects Included
The self-consistent field method of Cohen and Ehrenreich is used to obtain the macroscopic longitudinal dielectric constant that includes local field effects. The physical basis for the local field…
The absence of local field corrections in small polaron hopping conduction
The question of local field corrections to the hopping conductivity of small polarons in a polarizable dielectric is investigated. It is shown that the Lorentz contribution to the dipolar potentials…
An Introduction to Aspects of Thermodynamics and Kinetics: Relevant to Materials Science
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