Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519

@article{Meuffels2011CommentO,
  title={Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519},
  author={P. Meuffels and H. Schroeder},
  journal={Applied Physics A},
  year={2011},
  volume={105},
  pages={65-67}
}
In a recent publication (see title), it was proposed that—instead of the average macroscopic electric field—one should use the local or LORENTZ field inside dielectrics to calculate high-field ionic drift mobilities. This incorrect proposition seems now to start circulating even though it has been clearly shown in the past that the standard equations for ionic conduction in solids are by no way subject to any corrections for local or LORENTZ field effects. It is thus worth to recall some basic… Expand
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We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulationExpand
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A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switchingExpand
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