Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

@article{Kravchenko1999CommentO,
  title={Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))},
  author={S V Kravchenko and Myriam Paula Sarachik and D. Simonian},
  journal={Physical Review Letters},
  year={1999}
}
In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence. 
2 Citations
Screening and transport in 2D semiconductor systems at low temperatures
TLDR
This work derives a number of analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the2D resistivity can only be observed in high-quality and low-disorder 2D samples.
NONMONOTONIC TEMPERATURE-DEPENDENT RESISTANCE IN LOW DENSITY 2D HOLE GASES
The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9