Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

Abstract

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors… (More)
DOI: 10.1021/nl4029494

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