Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers

@inproceedings{Mouaziz2006CombinedAA,
  title={Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers},
  author={Schahrazede Mouaziz and Giovanni Boero and G. Moresi and Christian Degen and Qi Lin and Benedikt Meier and Juergen Brugger},
  year={2006}
}
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon cantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency of 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 10 17 N/Hz have been obtained in vacuum at room temperature for cantilevers annealed at 800 C. 2006 Elsevier B.V. All rights reserved. 

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