• DOI:10.1103/PhysRevB.88.075416
• Corpus ID: 118523506

Coherent Quantum Oscillations in a Silicon Charge Qubit

@inproceedings{Shi2012CoherentQO,
  title={Coherent Quantum Oscillations in a Silicon Charge Qubit},
  author={Zhan Shi and Christie B. Simmons and Daniel R. Ward and Jonathan R. Prance and R. T. Mohr and Teck Seng Koh and John King Gamble and Xian Wu and Donald E. Savage and Max G. Lagally and Mark Friesen and Susan N. Coppersmith and M. A. Eriksson},
  year={2012}
}

• Zhan Shi, C. Simmons, +10 authors M. Eriksson
• Published 2 August 2012
• Physics

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T ∗ 2 ranges from 127 ps to ∼2.1 ns; it depends substantially on how the energy difference of the the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit’s double-well potential). In the regime with the shortest T ∗ 2 , applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 ps to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.