Classical origin of conductance oscillations in an integrable cavity

@article{Poltl2016ClassicalOO,
  title={Classical origin of conductance oscillations in an integrable cavity},
  author={Christina Poltl and Aleksey Kozikov and Klaus Ensslin and Thomas Ihn and Rodolfo Jalabert and Christian Reichl and Werner Wegscheider and Dietmar Weinmann},
  journal={Physical Review B},
  year={2016},
  volume={94},
  pages={195304}
}
Scanning gate microscopy measurements in a circular ballistic cavity with a tip placed near its center yield a nonmonotonic dependence of the conductance on the tip voltage. Detailed numerical quantum calculations reproduce these conductance oscillations, and a classical scheme leads to its physical understanding. The large-amplitude conductance oscillations are shown to be of classical origin, and they are well described by the effect of a particular class of short trajectories. 

Figures from this paper

Signatures of folded branches in the scanning gate microscopy of ballistic electronic cavities

We demonstrate the emergence of classical features in electronic quantum transport for the scanning gate microscopy response in a cavity defined by a quantum point contact and a micron-sized circular

Scanning gate experiments: From strongly to weakly invasive probes

An open resonator fabricated in a two-dimensional electron gas is used to explore the transition from strongly invasive scanning gate microscopy to the perturbative regime of weak tip-induced

Imaging signatures of the local density of states in an electronic cavity

We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator,

Two-dimensional Rutherford-like scattering in ballistic nanodevices

Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this

Energy stability of branching in the scanning gate response of two-dimensional electron gases with smooth disorder

The branched pattern typically observed through the scanning gate microscopy (SGM) of two dimensional electron gases in the presence of weak, smooth disorder has recently been found to be robust

Partial local density of states from scanning gate microscopy

Scanning gate microscopy (SGM) images from measurements made in the vicinity of quantum point contacts (QPC) were originally interpreted in terms of current flow. Some recent work has analytically

References

SHOWING 1-10 OF 13 REFERENCES

Scholarpedia 11

  • 30946
  • 2016

Nature (London) 415

  • 765
  • 2002

Nano Lett

  • 5, 1285
  • 2005

First-order perturbation theory of SGM 10,11 can only predict the initial slope in the curve of the conductance versus tip strength

    Such a choice affects the value of the dimensionless strength parameter ut

      Semicond

      • Sci. Technol. 26, 064008
      • 2011

      New J

      • Phys. 17, 043043
      • 2015

      The symmetry of the system, with equal width openings exactly opposite to each other, makes reflection after an odd number of bounces impossible, such that P b R (b) vanishes for all odd b

        In addition, the tip potential affects the initial velocities. 31 Though it is in principle possible to take these two corrections into account, we have checked that for not too strong tip strength

          Science 289

          • 2323
          • 2000