Class-E Silicon Carbide VHF Power Amplifier

@article{Franco2007ClassESC,
  title={Class-E Silicon Carbide VHF Power Amplifier},
  author={Manuel Melle Franco and Allen Katz},
  journal={2007 IEEE/MTT-S International Microwave Symposium},
  year={2007},
  pages={19-22}
}
Silicon carbide (SiC) Metal-Semiconductor Field Effects Transistors (MESFET) have been mostly employed in microwave and broadband radio frequency (RF) power amplifiers. This paper investigates an alternative use in high efficiency, class-E RF power amplifiers in the VHF range. Both simulation and experimental results are shown and demonstrate excellent agreement. A maximum drain dc to RF efficiency of 87% was predicted and 86.8 % achieved. The SiC MESFETs used in this project appear to offer… CONTINUE READING
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