Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 µm CMOS

@article{Vathulya2001Class1B,
  title={Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 µm CMOS},
  author={V. Vathulya and Tirdad Sowlati and D. M. W. Leenaerts},
  journal={Proceedings of the 27th European Solid-State Circuits Conference},
  year={2001},
  pages={57-60}
}
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an… CONTINUE READING
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