Circular photogalvanic effect due to quantum interference in the terahertz radiation absorption

Abstract

We report on the observation of the circular (radiation helicity dependent) and linear photogalvanic effects in MOSFETs with n-type inversion channels fabricated on vicinal silicon surfaces. The photocurrents are excited in unbiased transistors across the source and drain contacts by terahertz radiation at normal incident. We developed the miscroscopic… (More)

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@article{Reitmaier2008CircularPE, title={Circular photogalvanic effect due to quantum interference in the terahertz radiation absorption}, author={C. Reitmaier and S. A. Tarasenko and Peter Olbrich and Daniel Plohmann and Jon Karch and Verena Lechner and Z. D. Kvon and S. D. Ganichev}, journal={2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves}, year={2008}, pages={1-3} }