Circuit-level reliability requirements for Cu metallization

@article{Alam2005CircuitlevelRR,
  title={Circuit-level reliability requirements for Cu metallization},
  author={Muhammad Murshed Alam and Christopher Ec Gan and Feng Wei and Chris Thompson and D. E. Troxel},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2005},
  volume={5},
  pages={522-531}
}
Under similar test conditions, the electromigration reliability of Al and Cu interconnect trees demonstrate significant differences because of differences in interconnect architectural schemes. The low critical stress for void nucleation at the Cu and interlevel diffusion-barrier interface leads to varying failure characteristics depending on the via position and configuration in a line. Unlike Al technology, a (jL) product-filtering algorithm with a classification of separate via-above and via… CONTINUE READING

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Reliability assessment methodologies for copper-based interconnects in integrated circuits

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