# Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

@article{Ventra2009CircuitEW, title={Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors}, author={Massimiliano Di Ventra and Yuriy V. Pershin and Leon Ong Chua}, journal={Proceedings of the IEEE}, year={2009}, volume={97}, pages={1717-1724} }

We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons…

## 771 Citations

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

- Engineering
- 2017

Abstract. We report a similar feature in the response of resistor–memristor and capacitor–memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both…

Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

- Computer Science
- 2013

A collection of models of different memory circuit elements and a methodology for their accurate and reliable modeling in the SPICE environment are presented and codes of these models written in the most popular SPICE versions are provided for the benefit of the reader.

Small signal model of memcapacitor-inductor oscillation circuit

- Computer Science2017 Electric Electronics, Computer Science, Biomedical Engineerings' Meeting (EBBT)
- 2017

A memcapacitor-inductor oscillation circuit is examined using simulations and also its small signal equivalent circuit is obtained using perturbation theory since such a circuit does not have an exact solution.

Realization of the meminductor.

- PhysicsACS nano
- 2014

This work demonstrates pinched hysteretic magnetic flux-current signals at room temperature based on the spin Hall magnetoresistance effect in several-nanometer-thick thin films, exhibiting the nonvolatile memorizing property and magnetic energy storage ability of the meminductor.

On the physical properties of memristive, memcapacitive and meminductive systems

- PhysicsNanotechnology
- 2013

It is shown that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage), are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe.

Memristors and memristive circuits - an overview

- Chemistry2012 IEEE International Symposium on Circuits and Systems
- 2012

A tutorial overview of the state-of-the-art of theory and applications of single memristor devices as well as memristive circuits is presented.

Memfractance: A Mathematical Paradigm for Circuit Elements with Memory

- Computer ScienceInt. J. Bifurc. Chaos
- 2014

Fractional calculus is used to generalize and provide a mathematical paradigm for describing the behavior of capacitive and inductive elements, namely, memcapacitor and meminductor whose properties depend on the state and history of the system.

Memristors: A New Nanoscale CNN Cell

- Physics
- 2010

The circuit-theoretic foundation of the memristor and its generalizations to a lossless memory capacitor and a lossless memory inductor is presented along with the devices’ constitutive relations.…

Memristor, Memcapacitor, Meminductor : Models and Experimental Circuit Emulators

- EngineeringEngineering, Technology & Applied Science Research
- 2022

Before 1971, the number of passive electrical components was limited to three: resistor, capacitor, and inductor. In 1971, Pr. Chua predicted the existence of a fourth element, called memristor,…

SPICE modeling of memristive, memcapacitative and meminductive systems

- Engineering2009 European Conference on Circuit Theory and Design
- 2009

It is shown that the memristor, designed in HP laboratories, can be modeled as a first-order memristive system with nonlinear dependence of the time derivative of the state variable on this variable and on the current flowing through.

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