Chipscale plasmonic modulators and switches based on metal–insulator–metal waveguides with Ge2Sb2Te5

  title={Chipscale plasmonic modulators and switches based on metal–insulator–metal waveguides with Ge2Sb2Te5},
  author={Zhaojian Zhang and Junbo Yang and Wei Bai and Yunxin Han and Xin He and Jingjing Zhang and Jie Huang and Dingbo Chen and Siyu Xu and Wanlin Xie},
  journal={Journal of Nanophotonics},
  pages={046009 - 046009}
Abstract. We introduce phase-change material Ge2Sb2Te5 (GST) into metal–insulator–metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and nonvolatile modulators and switches with excellent modulation depth 14 dB and fast response time in subnanosecond while possessing small… 
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