Chemistry of titanium dry etching in fluorinated and chlorinated gases

@article{Fracassi1992ChemistryOT,
  title={Chemistry of titanium dry etching in fluorinated and chlorinated gases},
  author={Francesco Fracassi and Riccardo d’Agostino},
  journal={Pure and Applied Chemistry},
  year={1992},
  volume={64},
  pages={703 - 707}
}
The chemistry of the dry etching of titanium thin films has been investigated in fluorinated and chlorinated environments. In CF4/O2 plasma the hard native stoichiometric oxide, TiO2, always present on the titanium surface, results in a non-reproducible induction time. During etching the surface of titanium is covered by a highly fluorinated layer which protects the metal by the reaction with oxygen. Chlorine is not able to remove the native oxide unless drastic conditions are realized, Once… CONTINUE READING

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