Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

@inproceedings{Hashizume2001ChemistryAE,
  title={Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures},
  author={Tamotsu Hashizume and Shinya Ootomo and Susumu Oyama and Masanobu Konishi and Hideki Hasegawa},
  year={2001}
}
Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took… CONTINUE READING

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