Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

Abstract

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

DOI: 10.1002/adma.200903689

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@article{Eda2010ChemicallyDG, title={Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.}, author={Goki Eda and Manish Chhowalla}, journal={Advanced materials}, year={2010}, volume={22 22}, pages={2392-415} }