Chemically active substitutional nitrogen impurity in carbon nanotubes.

@article{Nevidomskyy2003ChemicallyAS,
  title={Chemically active substitutional nitrogen impurity in carbon nanotubes.},
  author={Andriy H. Nevidomskyy and G{\'a}bor Cs{\'a}nyi and Michael C. Payne},
  journal={Physical review letters},
  year={2003},
  volume={91 10},
  pages={105502}
}
We investigate the nitrogen substitutional impurity in semiconducting zigzag and metallic armchair single-wall carbon nanotubes using ab initio density functional theory. At low concentrations (less than 1 at. %), the defect state in a semiconducting tube becomes spatially localized and develops a flat energy level in the band gap. Such a localized state makes the impurity site chemically and electronically active. We find that if two neighboring tubes have their impurities facing one another… CONTINUE READING
12 Citations
9 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 12 extracted citations

References

Publications referenced by this paper.
Showing 1-9 of 9 references

Thin Solid Films 398–399

  • R. Kurt, J. M. Bonard, A. Karimi
  • 193 (2001); R. Kurt et al., Carbon 39, 2163
  • 2001

Appl

  • W. Q. Han
  • Phys. Lett. 77, 1807
  • 2000

Ultramicroscopy 78

  • P. Rez, J. R. Alvarez, C. Pickard
  • 175
  • 1999
2 Excerpts

and M

  • R. Saito, G. Dresselhaus
  • S. Dresselhaus, Physical Properties of Carbon…
  • 1998
2 Excerpts

Phys

  • J.-Y. Yi, J. Bernholc
  • Rev. B 47, 1708
  • 1993

Chem

  • W. Andreoni, F. Gygi, M. Parrinello
  • Phys. Lett. 190, 159
  • 1992

Nature (London) 354

  • S. Iijima
  • 56
  • 1991
1 Excerpt

Carbon 14

  • A. Oberlin, M. Endo, T. Koyama
  • 133 (1976); J. Cryst. Growth 32, 335
  • 1976
1 Excerpt

Similar Papers

Loading similar papers…