Chemical trends of deep levels in van der Waals semiconductors

@article{Ci2020ChemicalTO,
  title={Chemical trends of deep levels in van der Waals semiconductors},
  author={Penghong Ci and Xuezeng Tian and Jun Kang and Anthony Salazar and Kazutaka Eriguchi and Sarah Warkander and Kechao Tang and Jiaman Liu and Yabin Chen and Sefaattin Tongay and Wladek Walukiewicz and Jianwei Miao and Oscar D. Dubon and Junqiao Wu},
  journal={Nature Communications},
  year={2020},
  volume={11}
}
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors… 
3 Citations

Figures from this paper

Leaving defects out of 2D molybdenum disulfide
  • Saptarshi Das, A. Elías
  • Nature Electronics
  • 2021
Unveiling the multilevel structure of midgap states in Sb-doped MoX2 (X=S, Se, Te) monolayers
In this study, we use DFT calculations to investigate the electronic and structural properties of MoX$_2$ (X = S, Se, Te) monolayers doped with substitutional Sb atoms, with a central focus on the
p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices
Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well

References

SHOWING 1-10 OF 103 REFERENCES
Deep donor levels (DX centers) in III‐V semiconductors
DX centers, deep levels associated with donors in III‐V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
TLDR
Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.
Surface Defects on Natural MoS2.
TLDR
This work highlights that the high concentration of surface defects and impurity atoms may explain the variability observed in the electrical and physical characteristics of MoS2.
Defect-Tolerant Monolayer Transition Metal Dichalcogenides.
TLDR
A systematic first-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics finds that the TMDs based on group VI and X metals form deep gap states upon creation of a chalCogen vacancy, while the T MDs based upon group IV metals form only shallow defect levels and are thus predicted to be defect-tolerant.
Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering.
TLDR
It is found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface and the reduction state of CeO2 as an oxide substrate affects the interface charge transfer withMoS2.
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
TLDR
The creation of van der Waals metal–semiconductor junctions is reported, in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning.
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
TLDR
The authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconductor properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
TLDR
The authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalCogen atom is substituted by an oxygen atom, rather than vacancies.
Effect of point defects on the optical and transport properties of mos2 and ws2
Introduction. The mobility of current single-layer crystals of transition metal dichalcogenides (TMD) is highly dependent on the screening environment and is limited by the presence of defects in the
Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength,
...
1
2
3
4
5
...