Chemical liquid phase deposition of thin aluminum oxide films

@article{Sun2007ChemicalLP,
  title={Chemical liquid phase deposition of thin aluminum oxide films},
  author={J. Sun and Yingchun Sun},
  journal={Chinese Journal of Chemistry},
  year={2007},
  volume={22},
  pages={661-667}
}
  • J. Sun, Yingchun Sun
  • Published 2007
  • Materials Science, Chemistry, Physics
  • Chinese Journal of Chemistry
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only… Expand
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