Chemical composition tuning of the anomalous Hall effect in isoelectronic L10FePd(1-x)Pt(x) alloy films.

  title={Chemical composition tuning of the anomalous Hall effect in isoelectronic L10FePd(1-x)Pt(x) alloy films.},
  author={Pan He and L. Ma and Z. Shi and G. Y. Guo and J-G Zheng and Yufei Xin and S. M. Zhou},
  journal={Physical review letters},
  volume={109 6},
  • P. He, L. Ma, +4 authors S. M. Zhou
  • Published 2012
  • Materials Science, Physics, Medicine
  • Physical review letters
The anomalous Hall effect (AHE) in L1(0)FePd(1-x)Pt(x) alloy films is studied both experimentally and theoretically. We find that the intrinsic contribution (σ(AH)(int)) to the AHE can be significantly increased, whereas the extrinsic side-jump contribution (σ(AH)(sj)) can be continuously reduced from being slightly larger than σ(AH)(int) in L1(0) FePd to being much smaller than σ(AH)(int) in L1(0) FePt, by increasing the Pt composition x. We show that this chemical composition tuning of the… Expand
Anomalous Nernst effect in disordered FePtPd ternary alloy films
  • L. Ma, Y. Zhang, +5 authors C. You
  • Materials Science
  • AIP Advances
  • 2019
The anomalous Nernst effect (ANE) in disordered Fe0.5(PtxPd1-x)0.5 alloy films is investigated at room temperature. The spin orbit coupling (SOC) strength is continuously tuned by changing theExpand
Thickness dependence of anomalous Hall conductivity in L10-FePt thin film
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (fromExpand
Tuning anomalous Hall effect in bilayers films by the interfacial spin-orbital coupling
The anomalous Hall effect (AHE) in the Mn4N/Au bilayers with various Au thicknesses has been investigated. The new scaling including multiple competing mechanisms is employed to analyze theExpand
Tunable anomalous Hall effect in multilayers induced by artificial interfacial scattering dots
Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Mg or Ru) multilayers by interfacial modification was reported. AHE behavior can be effectively tuned with the different insertion. For example,Expand
The anomalous Hall effect in the perpendicular Ta/CoFeB/MgO thin films
The anomalous Hall effect (AHE) in the perpendicular Ta/CoFeB/MgO thin film has been investigated. Between the AHE coefficient (RS) and longitudinal resistivity (ρxx), a linear behavior of RS/ρxxExpand
Effect of growth temperature on the electronic transport and anomalous Hall effect response in co-sputtered Co2FeSi thin films
Co-sputtered Co2FeSi thin films are studied by varying the growth temperature (Ts) as a control parameter in terms of the appreciable change in the disorder. The effect of Ts on structural, magnetic,Expand
Ultrahigh Anomalous Hall Sensitivity in Co/Pt Multilayers by Interfacial Modification
A large enhancement of anomalous Hall sensitivity (S-v) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt](3)/MgO multilayered structure. The values of S-v are increased to 8363Expand
Anomalous Hall effect in epitaxial permalloy thin films
Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jumpExpand
Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W
Abstract We report systematic measurements of anomalous Hall effect (AHE) in MnAl/W bilayers modified by strong spin Hall effect (SHE) of the heavy metals, in which a single L10-MnAl epitaxial layerExpand
Fe50Pt50-xPdx alloy thin films with L10 structure epitaxially grown on MgO(001) substrates
Fe50 Pt50–x Pdx (at. %, x = 0, 12.5, 25, 37.5, 50) alloy epitaxial films are prepared on MgO(001) substrates at temperatures ranging from room temperature to 600 °C by radio-frequency magnetronExpand


Spin-orbit strength driven crossover between intrinsic and extrinsic mechanisms of the anomalous hall effect in the epitaxial L1{0}-ordered ferromagnets FePd and FePt.
The composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1_{0} FePd and FePt alloys are determined and it is suggested that this phenomenon can be used for tuning the origins of the AHE in complex alloys. Expand
Tuning anomalous Hall conductivity in L10 FePt films by long range chemical ordering
For L10 FePt films, the anomalous Hall conductivity σxy=−aσxx−b, where a=a0f(T), b=b0f(T), and f(T) is the temperature dependence factor of the spontaneous magnetization. With increasing chemicalExpand
Temperature dependence of the intrinsic anomalous Hall effect in nickel
The unusual temperature dependence of the anomalous Hall effect (AHE) in Ni is investigated by an experimental approach which enables us to extract the intrinsic anomalous Hall conductivity over theExpand
Anisotropic intrinsic anomalous Hall effect in ordered3dPt alloys
By performing first-principles calculations, we investigate the intrinsic anomalous Hall conductivity (AHC) and its anisotropy in ordered L1${}_{0}$ FePt, CoPt, and NiPt ferromagnets and theirExpand
Nanostructure and magnetic properties of polycrystalline FePtxPd1 − x ternary alloy films
Abstract In this study, the FePt x Pd 1 −  x ( x  = 0, 0.25, 0.5, 0.75, 1) (Fe–Pt–Pd) alloy films were prepared by sputtering. The effects of Pt addition content and heat treatment on theExpand
Ab initio theory of the scattering-independent anomalous Hall effect.
The full AHC thus calculated agrees systematically with experiment to a degree unattainable so far, correctly capturing the previously missing elements of side-jump contributions, hence paving the way to a truly predictive theory of the anomalous Hall effect. Expand
Half-metallic ferromagnets. II. Transport properties of NiMnSb and related inter-metallic compounds
For pt.I see ibid., vol.1, p.2341 (1989). The electrical resistivity and the Hall effect of inter-metallic compounds XMnSb (X=Pt, Ni, Au) and PtMnSn were investigated in the temperature region 4-1000Expand
Proper scaling of the anomalous Hall effect.
A new scaling rhoAH=f(rho( xx0), rho(xx)) that also involves the residual resistivity has been established which helps identify the intrinsic and extrinsic mechanisms of the anomalous Hall effect. Expand
Anomalous Hall effect in disordered multiband metals.
We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and theExpand
Electrical Resistance of Ferromagnetic Metals
We use a model for ferromagnets such that the electrical current is carried by 4s (or 6s) electrons which are assumed to be described in band scheme and the unpaired electrons (3d or 4J) are assumedExpand