Chemical and potential bending characteristics of SiNx/AlGaN interfaces prepared by in situ metal-organic chemical vapor deposition

@inproceedings{Ogawa2007ChemicalAP,
  title={Chemical and potential bending characteristics of SiNx/AlGaN interfaces prepared by in situ metal-organic chemical vapor deposition},
  author={Eri Ogawa and Tamotsu Hashizume and Satoshi Nakazawa and Tetsuzo Ueda and Tsuyoshi Tanaka},
  year={2007}
}
We investigate the chemical and potential-bending characteristics of in situ SiNx/AlGaN interfaces prepared by metal-organic chemical vapor deposition. X-ray photoelectron spectroscopy showed that the in situ SiNx layer had typical chemical binding energies corresponding to the Si–N bonds. The in situ SiNx deposition brought no chemical degradation on the AlGaN surface at the SiNx/AlGaN interface, whereas the ex situ deposition of SiNx by a plasma process induced chemical disorder on the AlGaN… CONTINUE READING

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