Chemical Free Room Temperature Wafer To Wafer Direct Bonding

@inproceedings{Farrens1995ChemicalFR,
  title={Chemical Free Room Temperature Wafer To Wafer Direct Bonding},
  author={Shari N. Farrens and James Dekker and J. Keith Smith and Brian E. Roberds},
  year={1995}
}
A limitation to the use of direct wafer bonding methods for micromachining and thin film device manufacturing has been the necessity for high temperature anneals to strengthen the bonded interface. Obviously, strong interface strength is needed to withstand backthinning processes and the rigors of device fabrication. Unfortunately, the elevated temperature exposure has a detrimental effect on implanted or diffused etch stop layers via diffusive broadening. Additionally, for many micromachined… CONTINUE READING

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