Charge trapping by oxygen-related defects in HfO/sub 2/-based high-k gate dielectrics [MOSFETs]

@article{Yamabe2005ChargeTB,
  title={Charge trapping by oxygen-related defects in HfO/sub 2/-based high-k gate dielectrics [MOSFETs]},
  author={Kikuo Yamabe and Miki Goto and Koji Higuchi and A. Uedono and Kenji Shiraishi and Seiichi Miyazaki and Kazuyoshi Torii and Mauro Boero and Toyohiro Chikyow and Satoshi Yamasaki and Hiroyuki Kitajima and Kazushi Yamada and Tsunetoshi Arikado},
  journal={2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.},
  year={2005},
  pages={648-649}
}
The time-dependences of leakage currents due to electrons and holes flowing through HfO/sub 2/-based high-k gate dielectric films under constant voltage stresses are investigated by a carrier separation method using field-effect transistor structures. In the case of balanced injection, some of the injected electrons were trapped near the gate, while some of the injected holes were trapped near the substrate. As a result, both leakage currents reduced. Capacitance change during the relaxation… CONTINUE READING