Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

@inproceedings{Kerber2003ChargeTA,
  title={Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes},
  author={Andreas Kerber and Eduard Cartier and Robin Degraeve and Philippe Roussel and Luigi Pantisano and Thomas Kauerauf and Guido Groeseneken and Herman E. Maes and Udo Schwalke},
  year={2003}
}
  • Andreas Kerber, Eduard Cartier, +6 authors Udo Schwalke
  • Published 2003
  • Physics
  • A detailed study on charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes has been carried out. Due to the inherent asymmetry of the dual layer stack all electrical properties studied were found to be strongly polarity dependent. The gate current is strongly reduced for injection from the TiN (gate) electrode compared to injection from the n-type Si substrate. For substrate injection, electron trapping occurs in the bulk of the Al/sub 2/O/sub… CONTINUE READING

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