• Corpus ID: 195766930

Charge transition levels of quantum emitters in hexagonal boron nitride

@article{Xu2019ChargeTL,
  title={Charge transition levels of quantum emitters in hexagonal boron nitride},
  author={Zai‐Quan Xu and Noah Mendelson and John A. Scott and Chi Li and Igor Aharonovich and Milos Toth},
  journal={arXiv: Materials Science},
  year={2019}
}
Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of quantum emitters in hBN, as well as practical applications since $\rm E_t$ determines defect charge… 

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