Charge control in InP/(Ga,In)P single quantum dots embedded in Schottky diodes

@article{Couto2011ChargeCI,
  title={Charge control in InP/(Ga,In)P single quantum dots embedded in Schottky diodes},
  author={O. Couto and J. Puebla and E. Chekhovich and I. Luxmoore and C. Elliott and N. Babazadeh and M. Skolnick and A. Tartakovskii and A. Krysa},
  journal={Physical Review B},
  year={2011},
  volume={84},
  pages={125301}
}
We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multiparticle states and carry out a systematic study of the neutral exciton state dipole… Expand