Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

@article{Antonova2006ChargeAE,
  title={Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence},
  author={I. V. Antonova and M B Gulyaev and Z. S. Yanovitskaya and Yehudit Goldstein and Jedrzej Jedrzejewski},
  journal={2006 Multiconference on Electronics and Photonics},
  year={2006},
  pages={57-60}
}
The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T>230 K. Variable range hopping conductivity strongly depended on the… CONTINUE READING