Charge Transport and Degradation in HfO2 and HfOx Dielectrics

  title={Charge Transport and Degradation in HfO2 and HfOx Dielectrics},
  author={Andrea Padovani and Luca Larcher and Gennadi Bersuker and Paolo Pavan},
  journal={IEEE Electron Device Letters},
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport simulations based on phonon-assisted carrier tunneling between trap sites, we demonstrate that higher currents generally observed in HfOx are due to a higher density of the as-grown oxygen vacancy defects assisting the charge transport. Reduction of the dielectric BD field (EBD) in HfOx is explained by the lower zero-field… CONTINUE READING
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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

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Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

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