Charge Transport and Degradation in HfO2 and HfOx Dielectrics

@article{Padovani2013ChargeTA,
  title={Charge Transport and Degradation in HfO2 and HfOx Dielectrics},
  author={Andrea Padovani and Luca Larcher and Gennadi Bersuker and Paolo Pavan},
  journal={IEEE Electron Device Letters},
  year={2013},
  volume={34},
  pages={680-682}
}
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport simulations based on phonon-assisted carrier tunneling between trap sites, we demonstrate that higher currents generally observed in HfOx are due to a higher density of the as-grown oxygen vacancy defects assisting the charge transport. Reduction of the dielectric BD field (EBD) in HfOx is explained by the lower zero-field… CONTINUE READING
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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

  • C. Walczyk, C. Wenger, +10 authors T. Schroeder
  • J. Vac. Sci. Technol. B, vol. 29, no. 1, pp…
  • 2011

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

  • L. Goux, P. Czarnecki, +7 authors L. Altimime
  • Appl. Phys. Lett., vol. 97, no. 24, pp. 243509-1…
  • 2010
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