Charge Persistence in InGaAs/InP Single-Photon Avalanche Diodes

Abstract

We present a detailed characterization and modeling of the charge persistence effect that impacts InGaAs/InP single-photon avalanche diodes. Such phenomenon is due to holes that pile-up at the heterointerface outside the active area and has two main consequences: 1) higher noise (equivalent to higher dark count rate), not decreasing as expected at low… (More)

Topics

12 Figures and Tables

Slides referencing similar topics