Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

@article{Samsel2013ChargeCM,
  title={Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors},
  author={Isaak K. Samsel and En Xia Zhang and Nicholas C. Hooten and Erik D. Funkhouser and William G. Bennett and Robert A. Reed and Ronald D. Schrimpf and M. W. Mccurdy and Daniel M. Fleetwood and Robert A. Weller and Gyorgy Vizkelethy and Xiao Sun and Tso-Ping Ma and Omair I. Saadat and Tom{\'a}s Palacios},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={4439-4445}
}
Charge collection mechanisms in AlGaN/GaN MOS-HEMTs are investigated. Device types include those with no gate oxide, and those with HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> gate oxides. Simultaneous charge collection is observed at the gate and the drain or the source, depending on strike location. Heavy ion data coupled with device simulations show that the introduction of a thin HfO<sub>2</sub> layer in the gate stack introduces only a small valence band barrier, reducing but not… CONTINUE READING

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