Charge, current, and noise partitioning in MOSFET in the presence of mobility degradation

  title={Charge, current, and noise partitioning in MOSFET in the presence of mobility degradation},
  author={A. S. Roy and C. Enz and J. M. Sallese},
  journal={IEEE Electron Device Letters},
The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced in state-of-the-art submicrometer technologies. In this paper, after demonstrating that the well-known WD partitioning is indeed invalid for field-dependent mobility, the authors develop a very general partitioning strategy that can always be… CONTINUE READING

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Advanced compact models for MOSFETs

  • J. Watts, C. McAndrew, +7 authors C.-T. Sah
  • Tech. Proc. Workshop Compact Modeling, May 2005…
  • 2005
1 Excerpt

Transient analysis of MOS transistors

  • S.-Y. Oh, D. Ward, R. Dutton
  • IEEE Trans. Electron Devices, vol. ED-27, no. 8…
  • 1980
1 Excerpt

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