Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Abstract

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM… (More)

Topics

10 Figures and Tables

Statistics

0204060201020112012201320142015201620172018
Citations per Year

179 Citations

Semantic Scholar estimates that this publication has 179 citations based on the available data.

See our FAQ for additional information.