Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

@inproceedings{Ma2002CharacterizationOU,
  title={Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation},
  author={Ma and Zhongyuan and Bao and Yun and Ying Chen and Kunji and Shi and Jianjun and Jing Zhu Li and Wei and Xu and Jun and Dan Liu and Jiayu and Feng and Duan},
  year={2002}
}
Ultrathin SiO2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃) . The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO2 and the SiO2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure… CONTINUE READING