Characterization of threshold voltage instability after program in charge trap flash memory

Abstract

We investigated threshold voltage shifts after program pulse in charge trap flash memory by measuring drain current changes. We have found threshold voltage shifts can be characterized as a function of not only the materials of tunnel oxide, trap layer, blocking layer, but also physical parameters like device size and electrical measurement environment such… (More)

Topics

11 Figures and Tables

Cite this paper

@article{Kim2009CharacterizationOT, title={Characterization of threshold voltage instability after program in charge trap flash memory}, author={Bio Kim and Seungjae Baik and Sunjung Kim and Joon-Gon Lee and BonYoung Koo and Siyoung Q Choi and Joo-tae Moon}, journal={2009 IEEE International Reliability Physics Symposium}, year={2009}, pages={284-287} }