Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC

@article{Florian2013CharacterizationOT,
  title={Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC},
  author={C. Florian and A. Santarelli and R. Cignani and F. Filicori},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2013},
  volume={61},
  pages={1879-1891}
}
  • C. Florian, A. Santarelli, +1 author F. Filicori
  • Published 2013
  • Materials Science
  • IEEE Transactions on Microwave Theory and Techniques
  • A laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs, suitable for microwave high power amplifier (HPA) design. The setup allows the measurement of the drain current time-domain dynamic response to positive drain bias pulses, performed at different temperatures and different dissipated power densities. The proposed measurement conditions discriminate thermal phenomena… CONTINUE READING
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