Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC

@article{Florian2013CharacterizationOT,
  title={Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC},
  author={Corrado Florian and Alberto Santarelli and Rafael Cignani and Fabio Filicori},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2013},
  volume={61},
  pages={1879-1891}
}
A laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs, suitable for microwave high power amplifier (HPA) design. The setup allows the measurement of the drain current time-domain dynamic response to positive drain bias pulses, performed at different temperatures and different dissipated power densities. The proposed measurement conditions discriminate thermal phenomena… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 13 CITATIONS

References

Publications referenced by this paper.
SHOWING 1-10 OF 44 REFERENCES

Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates

  • N. Killat
  • IEEE Electron Device Lett., vol. 33, no. 3, pp…
  • 2012
1 Excerpt

Similar Papers

Loading similar papers…