Characterization of silicon thin overlayers on rutile TiO2 (110)-(1x1)


Silicon thin films for coverages (θ) between 0.3 and 3 monolayers have been grown on rutile TiO2(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and low energy electron diffraction (LEED). A clear evidence of a strong Si/TiO2 interaction consistent with the high affinity of O… (More)


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