Characterization of self-aligned metal electrodes poly-Si TFTs with schottky barrier contact

@article{Chen2010CharacterizationOS,
  title={Characterization of self-aligned metal electrodes poly-Si TFTs with schottky barrier contact},
  author={Jie Chen and Mingxiang Wang and Ping Lv and Man Wong},
  journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology},
  year={2010},
  pages={929-931}
}
A new type of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional poly-Si TFTs are found, and are attributed to the presence of Schottky barriers at the channel ends.