Characterization of optically controlled ion implanted in1-gaxas MESFET with buried gate

Abstract

Optoelectronic is one of the thrust areas for the recent research activity. One of the key components of the optoelectronic family is photo detector to be widely used in broadband communication, optical computing, optical transformer, optical control etc. Present paper includes the investigation carried on the basis of the mathematical modeling of InGaAs… (More)
DOI: 10.1145/1980022.1980264

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