Characterization of nanocrystallites in porous p-type 6H-SiC

@inproceedings{Shor1994CharacterizationON,
  title={Characterization of nanocrystallites in porous p-type 6H-SiC},
  author={Joseph Shor and L. Bemis and Anthony D. Kurtz and I. Grimberg and B. Z. Weiss and M. F. MacMillian and Wolfgang J. Choyke},
  year={1994}
}
We report the formation of porous p‐type 6H‐SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1–10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H‐SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.