Characterization of hydrogen etched 6H-SiCÑ0001Ö substrates and subsequently grown AlN films

@inproceedings{Hartman2003CharacterizationOH,
  title={Characterization of hydrogen etched 6H-SiC{\~N}0001{\"O} substrates and subsequently grown AlN films},
  author={Joel D. Hartman and A. M. Roskowski and Zachary J Reitmeier and K. M. Tracy and Robert F. Davis and Robert J. Nemanich},
  year={2003}
}
Wafers of n-type, 6H–SiC(0001) with (ND–NA)=(5.1–7.5)×1017 and 2.5×1018 were etched in a flowing 25%H2/75%He mixture within the range of 1500–1640 °C at 1 atm. Equilibrium thermodynamic calculations indicated that the presence of atomic hydrogen is necessary to achieve etching of SiC. Atomic force microscopy, optical microscopy, and low energy electron diffraction of the etched surface revealed a faceted surface morphology with unit cell and half unit cell high steps and a 1×1 reconstruction… CONTINUE READING

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