Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

@article{Pease2004CharacterizationOE,
  title={Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures},
  author={R. L. Pease and D. G. Platteter and G W Dunham and J. Seiler and H. Barnaby and R. D. Schrimpf and M. R. Shaneyfelt and M. Maher and R. N. Nowlin},
  journal={IEEE Transactions on Nuclear Science},
  year={2004},
  volume={51},
  pages={3773-3780}
}
The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N/sub ot/) and interface trap (N/sub it/) densities. The buildup of N/sub ot/ and N/sub it/ with total dose is… CONTINUE READING

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