Characterization of current transport in MNOS structures with complementary tunneling emitter bipolar transistors

Abstract

We have extended the work of previous investigators and studied current transport in thin- (10-20 Å) and thick-(80 Å) oxide MNOS structures with complementary tunneling emitter bipolar transistors. These devices are fabricated with ion-implanted p-n and n-p junctions to distinguish the dominant carrier species in the insulator. The dominant… (More)

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@article{Schroder1979CharacterizationOC, title={Characterization of current transport in MNOS structures with complementary tunneling emitter bipolar transistors}, author={D. K. Schroder and M. H. White}, journal={IEEE Transactions on Electron Devices}, year={1979}, volume={26}, pages={899-906} }