Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

@article{Oh2011CharacterizationOA,
  title={Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors},
  author={Byoungchan Oh and Heung-Jae Cho and Heesang Kim and Y. Son and Taewook Kang and Sunyoung Park and Seunghyun Jang and Jongho Lee and Hyungcheol Shin},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={1741-1747}
}
An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics of GIDL. Ignoring this variation in surface potential leads to an error of up to 116% in… Expand

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