Characterization of a 6.5kV IGBT for medium-voltage high-power resonant DC-DC converter

@article{Dujic2013CharacterizationOA,
  title={Characterization of a 6.5kV IGBT for medium-voltage high-power resonant DC-DC converter},
  author={Drazen Dujic and Gina K. Steinke and E. Bianda and Silvia Lewdeni-Schmid and Chuanhong Zhao and J. K. Steinke},
  journal={2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2013},
  pages={1438-1444}
}
Medium-voltage (MV) high-power converters are usually realized using high-voltage semiconductors (3.3kV, 4.5kV or 6.5kV) operated with low-switching frequencies in the range of several hundred Hz and under hard-switching conditions. However, for medium-voltage high-power DC-DC converters employing transformer for galvanic isolation, it is attractive to… CONTINUE READING