Characterization of Stress in TlBr devices

@article{Datta2014CharacterizationOS,
  title={Characterization of Stress in TlBr devices},
  author={Amlan Datta and Shariar Motakef},
  journal={2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)},
  year={2014},
  pages={1-5}
}
Thallium bromide (TlBr) is a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. Several surface modification techniques have been demonstrated to increase the lifetime of TlBr devices at room temperature. However, absence of reproducibility in the performance of TlBr detectors (even with low ionic conduction at -20°C) suggests presence of unexplored bulk phenomena. Stress in the TlBr crystal due to various intrinsic (e.g. grain boundaries… CONTINUE READING